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| PC3H7/PC3Q67Q PC3H7/PC3Q67Q s Features 1. Mini-flat package 2. Half pitch type (lead pitch : 1.27mm) 3. Isolation voltage (Viso : 2 500Vrms) 4. Applicable to infrared ray reflow (230C, for MAX. 30s) 5. High reliability 6. Taping package PC3H7 (1ch) PC3Q67Q (4ch) 7. Recognized by UL, file No. E64380 Approved by VDE, No.5922UG Mini-falt Package, General Purpose Half Pitch Photocoupler s Outline Dimensions PC3H7 Anode mark (Unit : mm) 2.60.3 1 S 3H7 4.40.2 5.30.3 (1.7) 4 2 3 1.270.25 0.05 1. Programmable controllers 0.2 s Applications s Package Specifications Model No. PC3H7 PC3Q67Q Taping specifications Taping reel diameter 330mm (3 000pcs.) Taping reel diameter 330mm (1 000pcs.) 0.10.1 7.0+0.2 -0.7 g ( ) : Reference dimensions +0.4 0.5-0.2 2.00.2 0.40.1 Epoxy resin Parting line Internal connection diagram 4 3 1 2 3 4 1 2 s Absolute Maximum Ratings 0.10.1 2.60.2 (Ta=25C) Symbol Unit Parameter Rating IF mA Forward current 50 *1Peak forward current A 1 IFM VR Reverse voltage 6 V mW Power dissipation P 70 Collector-emitter PC3H7 70 VCEO V voltage PC3Q67Q VCEO 35 V V Emitter-collector voltage VECO 6 mA Collector current 50 IC mW 150 Collector power dissipation PC mW 170 Total power dissipation Ptot *2Isolation voltage kVrms 2.5 Viso C Operating temperature Topr -30 to +100 C Tstg -40 to +125 Storage temperature *3Soldering temperature 260 C Tsol 0.2mm or more Anode Cathode Emitter Collector PC3Q67Q Input 10.30.3 16 1.270.25 9 Model No. Output 0.40.1 1 Epoxy resin 8 C0.4 0.20.05 4.40.2 Primary Side mark 5.30.3 +0.4 0.5-0.2 *1 Pulse width<=100s, Duty ratio : 0.001 *2 AC for 1min, 40 to 60%RH, f=60Hz *3 For 10s 6 Internal connection diagram 16 15 14 13 12 11 10 +0.2 7.0-0.7 9 1357 Anode 2468 Cathode 9 11 13 15 Emitter 10 12 14 16 Soldering area 1 2 3 4 5 6 7 8 Collector Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://www.sharp.co.jp/ecg/ PC3H7/PC3Q67Q s Electro-optical Characteristics Parameter Forward voltage Reverse current Terminal capacitance Collector dark current Output Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Response time Rise time Fall time PC3H7 PC3Q67Q PC3H7 PC3Q67Q Symbol VF IR Ct ICEO ICEO BVCEO BVCEO BVECO PC3H7 PC3Q67Q IC IC VCE(sat) RISO Cf tr tf Conditions IF=20mA VR=4V V=0, f=1kHz VCE=50V, IF=0 VCE=20V, IF=0 IC=0.1mA, IF=0 IC=0.1mA, IF=0 IE=10A, IF=0 IF=1mA, VCE=5V IF=5mA, VCE=5V IF=20mA IC=1mA DC500V 40 to 60%RH V=0, f=1MHz VCE=2V IC=2mA RL=100 MIN. - - - - - 70 35 6 0.2 2.5 - 5x1010 - - - TYP. 1.2 - 30 - - - - - - 5 0.1 1x1011 0.6 4 3 MAX. 1.4 10 250 100 100 - - - 4 30 0.2 - 1.0 18 18 (Ta=25C) Unit V A pF nA nA V V V mA mA V pF s s Input Transfer characteristics Fig.1 Forward Current vs. Ambient Temperature 60 Fig.2 Diode Power Dissipation vs. Ambient Temperature Diode power dissipation P (mW) 50 Forward current IF (mA) 100 40 80 70 60 30 20 40 10 0 -30 20 0 -30 0 25 50 55 75 100 125 0 50 55 100 Ambient temperature Ta (C) Ambient temperature Ta (C) PC3H7/PC3Q67Q Fig.3 Collector Power Dissipation vs. Ambient Temperature Fig.4 Total Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) 250 Power dissipation Ptot (mW) 200 170 150 100 50 0 -30 150 100 50 0 25 50 75 100 0 -30 0 25 50 75 100 125 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig.5 Peak Forward Current vs. Duty Ratio 10000 5000 Peak forward current IFM (mA) 2000 1000 500 200 100 50 20 10 5 5 10-3 2 5 10-2 2 5 10-1 2 5 Fig.6 Forward Current vs. Forward Voltage 500 200 Pulse width<=100s Ta=25C Ta=75C 50C 25C 0C Forward current IF (mA) 100 50 20 10 5 2 1 -25C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Duty ratio Forward voltage VF (V) Fig.7 Current Transfer Ratio vs. Forward Current 500 VCE=5V Ta=25C Current transfer ratio CTR (%) 400 Fig.8 Collector Current vs. Collector-emitter Voltage 50 IF=30mA PC (max) 20mA 10mA 40 Ta=25C 300 Collector current IC (mA) 30 5mA 20 200 100 10 1mA 0 1 10 100 0 2 4 6 8 10 Forward current IF (mA) Collector-emitter voltage VCE (V) 0 0.1 PC3H7/PC3Q67Q Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature 150 IF=5mA VCE=5V Collector-emitter saturation voltage VCE (sat) (V) Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 IF=20mA IC=1mA Relative current transfer ratio (%) 100 50 0 -30 0 20 40 60 80 100 0.00 -30 0 20 40 60 80 100 Ambient temperature Ta (C) Ambient temperaturet Ta (C) Fig.11 Collector Dark Current vs. Ambient Temperature 10-5 5 Fig.12 Response Time vs. Load Resistance 1000 500 200 100 Response time (s) 50 20 10 5 2 1 0.5 0.2 0.1 0.01 tr tf td ts VCE=2V IC=2mA Ta=25C VCE=20V Collector dark current ICEO (A) 10-6 5 10-7 5 10-8 5 10-9 5 10-10 5 10-11 -30 0 20 40 60 80 100 0.1 1 10 100 Ambient temperature Ta (C) Load resistance RL (k) Fig.13 Test Circuit for Response Time VCC Fig.14 Collector-emitter Saturation Voltage vs. Forward Current 10 Collector-emitter saturation voltage VCE (sat) (V) Ta=25C IC=0.5mA 1mA 3mA 6 5mA 4 7mA RD Input RL Output Input Output 10% 90% 8 td tr ts tf 2 0 0 2 4 6 8 10 Forward current IF (mA) PC3H7/PC3Q67Q Fig.15 Reflow Soldering Only one time soldering is recommended within the temperature profile shown below. 230C 200C 180C 25C 30s 1min 2min 1.5min 1min s Precautions for Use Please refer to the chapter "Precautions for Use". |
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